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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/169014
Title: Negative differential resistance in n-type noncompensated silicon at low temperature
Authors: Danilyuk, A. L.
Trafimenko, A. G.
Fedotov, A. K.
Svito, I. A.
Prischepa, S. L.
Issue Date: Nov-2016
Publisher: AIP Publishing
Citation: Applied Physics Letters. - 2016. - Vol. 109, Issue 22. - P. 222104-1 - 222104-4
Abstract: We present the results on low temperature current-voltage characteristics of noncompensated Si doped by Sb. In the temperature range 1.9–2.25 K and at electrical fields smaller than 1 V/cm, the negative differential resistance (NDR) was observed. The external magnetic field enhances the region of the NDR. We attribute this effect to the delocalization of the D− states in the upper Hubbard band due to the accumulation of the charge injected by current.
URI: http://elib.bsu.by/handle/123456789/169014
ISSN: 0003-6951
Appears in Collections:Кафедра физики твердого тела и нанотехнологий (статьи)

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