Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/14170
Title: | О возможности создания кремниевого инжекционного лазера на основе излучающих структурных дефектов |
Authors: | Юхневич, А. В. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | Jan-2007 |
Publisher: | БГУ |
Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2007. - № 1. – С. 13-17. |
Abstract: | The possibility of creation of silicon lasers based on the specific few-atomic structural imperfections of silicon crystal is discussed. These imperfections differ essentially from other defects of the crystal in their high photon emissivity, which is a consequence of no-phonon optical transitions between their localized electron states. A model of the basic electron processes in an active region of the laser crystal is proposed. |
URI: | http://elib.bsu.by/handle/123456789/14170 |
ISSN: | 0321-0367 |
Licence: | info:eu-repo/semantics/openAccess |
Appears in Collections: | 2007, №1 (январь) |
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