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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/14170
Title: О возможности создания кремниевого инжекционного лазера на основе излучающих структурных дефектов
Authors: Юхневич, А. В.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: Jan-2007
Publisher: БГУ
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2007. - № 1. – С. 13-17.
Abstract: The possibility of creation of silicon lasers based on the specific few-atomic structural imperfections of silicon crystal is discussed. These imperfections differ essentially from other defects of the crystal in their high photon emissivity, which is a consequence of no-phonon optical transitions between their localized electron states. A model of the basic electron processes in an active region of the laser crystal is proposed.
URI: http://elib.bsu.by/handle/123456789/14170
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:2007, №1 (январь)

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