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Title: Wide and Flat Waveguide Gain Spectrum in the Ga1-xInxAsySb1-y/AlxGa1-xAsySb1-y Asymmetric Multiple-Quantum- Well Heterostructures
Authors: Manak, I. S.
Ushakov, D. V.
Bialiausky, U. S.
Keywords: ЭБ БГУ::ТЕХНИЧЕСКИЕ И ПРИКЛАДНЫЕ НАУКИ. ОТРАСЛИ ЭКОНОМИКИ::Электроника. Радиотехника
Issue Date: 2007
Publisher: PHYSICS AND CHEMISTRY OF SOLID STATE
Citation: Physics and chemistry of solid state. 2007. Vol.8, No 4. P. 814--817.
Abstract: For asymmetric multiple-quantum-well heterostructures based on Ga1-xInxAsySb1-y/AlxGa1-xAsySb1-y semiconductors it is shown that a wide and almost flat waveguide gain spectrum can be obtained over the 2.3–2.84 μm spectral range. Main attention is devoted to the results obtained under study of spectral characteristics of two-, three- and four- quantum-well structures with active region layers of different widths. Numerical simulation for band diagrams of the active region and shape of the waveguide gain spectra are performed.
URI: http://elib.bsu.by/handle/123456789/12592
Appears in Collections:Кафедра квантовой радиофизики и оптоэлектроники. Статьи

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