Wide and Flat Waveguide Gain Spectrum in the Ga1-xInxAsySb1-y/AlxGa1-xAsySb1-y Asymmetric Multiple-Quantum- Well Heterostructures

Abstract

For asymmetric multiple-quantum-well heterostructures based on Ga1-xInxAsySb1-y/AlxGa1-xAsySb1-y semiconductors it is shown that a wide and almost flat waveguide gain spectrum can be obtained over the 2.3–2.84 μm spectral range. Main attention is devoted to the results obtained under study of spectral characteristics of two-, three- and four- quantum-well structures with active region layers of different widths. Numerical simulation for band diagrams of the active region and shape of the waveguide gain spectra are performed.