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https://elib.bsu.by/handle/123456789/125468| Title: | Mechanisms of carrier transport in Cux(SiO2)1-x nanocomposites manufactured by ion-beam sputtering with Ar ions |
| Authors: | Fedotov, A. K. Mazanik, A. V. Svito, I. A. Saad, A. M. Fedotova, V. V. Czarnacka, K. Koltunowicz, T. N. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | Nov-2015 |
| Publisher: | Polish Academy of Sciences, Institute of Physics |
| Citation: | Acta Physica Polonica A. – 2015. – Vol. 128, No 5. – P. 883 – 886 |
| Abstract: | The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cux(SiO2)1x nanocomposite lms around the percolation threshold xC in the temperature range of 4 30 K and frequencies of 20 MHz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold xC = 0:59 and nearly metallic behaviour beyond the xC. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < xC exhibited behavior close to ReZ(f) fs with s 1:0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > xC), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles. |
| URI: | http://elib.bsu.by/handle/123456789/125468 |
| Appears in Collections: | Кафедра физики твердого тела и нанотехнологий (статьи) |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| Mechanisms of carrier transport in Cux(SiO2)1-x nanocomposites manufactured by ion-beam sputtering with Ar ions.pdf | 520,23 kB | Adobe PDF | View/Open |
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