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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/125468
Title: Mechanisms of carrier transport in Cux(SiO2)1-x nanocomposites manufactured by ion-beam sputtering with Ar ions
Authors: Fedotov, A. K.
Mazanik, A. V.
Svito, I. A.
Saad, A. M.
Fedotova, V. V.
Czarnacka, K.
Koltunowicz, T. N.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: Nov-2015
Publisher: Polish Academy of Sciences, Institute of Physics
Citation: Acta Physica Polonica A. – 2015. – Vol. 128, No 5. – P. 883 – 886
Abstract: The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cux(SiO2)1􀀀x nanocomposite lms around the percolation threshold xC in the temperature range of 4 30 K and frequencies of 20 MHz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold xC = 0:59 and nearly metallic behaviour beyond the xC. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < xC exhibited behavior close to ReZ(f) f􀀀s with s 1:0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > xC), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.
URI: http://elib.bsu.by/handle/123456789/125468
Appears in Collections:Кафедра энергофизики



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