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|Title:||Mechanisms of carrier transport in Cux(SiO2)1-x nanocomposites manufactured by ion-beam sputtering with Ar ions|
|Authors:||Fedotov, A. K.|
Mazanik, A. V.
Svito, I. A.
Saad, A. M.
Fedotova, V. V.
Koltunowicz, T. N.
|Keywords:||ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика|
|Publisher:||Polish Academy of Sciences, Institute of Physics|
|Citation:||Acta Physica Polonica A. – 2015. – Vol. 128, No 5. – P. 883 – 886|
|Abstract:||The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cux(SiO2)1x nanocomposite lms around the percolation threshold xC in the temperature range of 4 30 K and frequencies of 20 MHz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold xC = 0:59 and nearly metallic behaviour beyond the xC. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < xC exhibited behavior close to ReZ(f) fs with s 1:0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > xC), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.|
|Appears in Collections:||Кафедра энергофизики|
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