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https://elib.bsu.by/handle/123456789/107016| Title: | Device-process simulation of silicon diode structures by various parameters of epitaxial film |
| Authors: | Lagunovich, N. L. Borzdov, V. M. Turtsevich, A. S. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2014 |
| Publisher: | Издательский центр БГУ |
| Citation: | Материалы и структуры современной электроники: сб. науч. тр. VI Междунар. науч. конф., Минск, 8-9 окт. 2014 г. / редкол.: В.Б. Оджаев (отв. ред.) [и др.]. - Минск: Изд. центр БГУ, 2014. - С. |
| Abstract: | The results of simulation of diode technological fabrication process and its electric characteristics for the cases of using next epitaxial film types: 1) 17.0SEPh2.0; 2) 25.0SEPh6.0; 3) 25.0SEPh20.0 are presented in this article. The calculation values of diode structure design parameters, threshold and breakdown characteristics and respective voltage values were received for three epitaxial film types. The calculated results are well matched with the experimental data. |
| URI: | http://elib.bsu.by/handle/123456789/107016 |
| ISBN: | 978-985-553-234-8 |
| Sponsorship: | Белорусский Республиканский Фонд Фундаментальных Исследований |
| Appears in Collections: | 2014. Материалы и структуры современной электроники |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| N. L. Lagunovich, V. M. Borzdov, A. S. Turtsevich..pdf | 231,25 kB | Adobe PDF | View/Open |
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