Logo BSU

Пожалуйста, используйте этот идентификатор, чтобы цитировать или ссылаться на этот документ: http://elib.bsu.by/handle/123456789/20683
Заглавие документа: Nanocrystal- and Dislocation-Related Luminescence in Si Matrix with InAs Nanocrystals
Авторы: Komarov, F.
Vlasukova, L.
Milchanin, O.
Mudryi, A.
Zuk, J.
Pyszniak, K.
Kulik, M.
Дата публикации: 2011
Библиографическое описание источника: Acta physika polonika A. - 2011. - № 1. - С. 204-207.
Аннотация: We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500 ±C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050 ±C. A part of the samples implanted at 25 ±C was additionally exposed to H+2 ions (100 keV, 1.2 × 1016 cm−2 in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2–80 nm and create various concentration and distribution of di˙erent types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively.
URI документа: http://elib.bsu.by/handle/123456789/20683
Располагается в коллекциях:Статьи сотрудников НИИ ПФП

Полный текст документа:
Файл Описание РазмерФормат 
Nanocrystal- and Dislocation-Related Luminescence.pdf1,22 MBAdobe PDFОткрыть

Все документы в Электронной библиотеке защищены авторским правом, все права сохранены.