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https://elib.bsu.by/handle/123456789/20683
Полная запись метаданных
Поле DC | Значение | Язык |
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dc.contributor.author | Komarov, F. | - |
dc.contributor.author | Vlasukova, L. | - |
dc.contributor.author | Milchanin, O. | - |
dc.contributor.author | Mudryi, A. | - |
dc.contributor.author | Zuk, J. | - |
dc.contributor.author | Pyszniak, K. | - |
dc.contributor.author | Kulik, M. | - |
dc.date.accessioned | 2012-10-31T09:01:12Z | - |
dc.date.available | 2012-10-31T09:01:12Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | Acta physika polonika A. - 2011. - № 1. - С. 204-207. | ru |
dc.identifier.uri | http://elib.bsu.by/handle/123456789/20683 | - |
dc.description.abstract | We have studied the influence of ion implantation and post-implantation annealing regimes on the structural and optical properties of silicon matrix with ion-beam synthesized InAs nanocrystals. (100) Si wafers were implanted at 25 and 500 ±C, subsequently with high fluences of As and In ions. After implantation the samples were processed by furnace and rapid thermal annealing at 900, 950 and 1050 ±C. A part of the samples implanted at 25 ±C was additionally exposed to H+2 ions (100 keV, 1.2 × 1016 cm−2 in terms of atomic hydrogen). This procedure was performed to obtain an internal getter. In order to characterize the implanted samples transmission electron microscopy and low-temperature photoluminescence techniques were employed. It was demonstrated that by introducing getter, varying the ion implantation temperature, ion fluences and post-implantation annealing duration, and temperature it is possible to form InAs nanocrystals in the range of sizes of 2–80 nm and create various concentration and distribution of di˙erent types of secondary defects. The last ones cause in turn the appearance in photoluminescence spectra dislocation-related D1, D2 and D4 lines at 0.807, 0.870 and 0.997 eV, respectively. | ru |
dc.language.iso | ru | ru |
dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
dc.title | Nanocrystal- and Dislocation-Related Luminescence in Si Matrix with InAs Nanocrystals | ru |
dc.type | Article | ru |
Располагается в коллекциях: | Статьи сотрудников НИИ ПФП |
Полный текст документа:
Файл | Описание | Размер | Формат | |
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Nanocrystal- and Dislocation-Related Luminescence.pdf | 1,22 MB | Adobe PDF | Открыть |
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