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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/194975
Title: Генерация электрон-дырочных пар в полупроводниках IV группы при электронном возбуждении
Authors: Шаршунов, Д. В.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2000
Publisher: Минск : Універсітэцкае
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2000. - № 1. – С. 8-10.
Abstract: Generation of electron-hole pairs in group IV semiconductors under irradiation by electron beam is distinguished. Values of this process cross sections for diamond, silicon and germanium are obtained and analyzed in energy range 100 eV — I MeV, algorithm of this calculation is described.
URI: http://elib.bsu.by/handle/123456789/194975
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:2000, №1 (январь)

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