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https://elib.bsu.by/handle/123456789/10473| Title: | Моделирование методом Монте-Карло электронного переноса в ультра короткоканальных МОП-транзисторах |
| Authors: | Жевняк, О. Г. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2010 |
| Publisher: | Материалы конференции ФММН2010 |
| Abstract: | In this paper Monte Carlo simulation of electron transport in MOSFET with 0,15 m channel length is considered. The economic algorithm for calculation of electron transport in conditions of inconstant concentration of electrons and acceptor ions is proposed. The dependencies of electric potential as well as electron concentration at different sections of channel are obtained. |
| URI: | http://elib.bsu.by/handle/123456789/10473 |
| Appears in Collections: | Статьи |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| ФММН2010.doc | 130,5 kB | Microsoft Word | View/Open |
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