Monte Carlo simulation of the low-temperature mobility of two-dimensional electrons in a silicon inversion layer

Abstract

The transport of two-dimensional electrons in a silicon inversion layer is determined by Monte Carlo simulation in the temperature range 4.2-40 K, where the electrical quantum limit occurs and only the lowest subband is populated. Two scattering mechanisms are taken into account: scattering by distant ionized impurities and scattering by surface roughness elements, along with their dependence on the polarizability of the two-dimensional electron gas. The mobility and coefficient of warm electrons in weak electric fields are calculated. The data are compared with previously published results.