Ion-beam synthesis of zinc-based nanoparticles in Si and SiO2

Abstract

At present, the increased interest in silicon and silicon-based layers with semiconductor or metal nanoclusters is motivated by their potential applications in a variety of fields including data storage devices, optoelectronics, and photovoltaics. Memory devices with nanocrystals as charge accumulation elements and light-emitting diodes based on metallic or semiconductor nanoparticles have already been demonstrated /1–2/. Up to now, much attention has been focused on the creation of Au, Ag or Cu precipitates in SiO2 matrix /3-4/. The silicon dioxide with metal Zn inclusions has good perspective for use in memory devices /5/, lasers /6/, solar cells /7/, electroluminescent displays, gas sensors and lithium battery. On the other hand, zinc oxide (ZnO) nanoparticles are of specific interest, since ZnO is a direct band material with a band width of 3.37 eV and high electron-hole energy in the exciton (60 meV). In the present work, we have studied the ion-beam synthesis of Zn-based nanocrystals in Si and SiO2 by high-fluence implantation of Zn ions.