Structure and electrical properties of heteroepitaxial InSb films after exposure to high-energy krypton ions

Abstract

The paper studies changes in the structure and electrical properties of InSb heteroepitaxial films on a single-crystal (100) GaAs base after irradiation with krypton ions with an energy of 145 MeV and fluences of 1012 and 5×1012 ion/cm2. It is found that after irradiation with krypton ions, significant macro- and microstresses arise in the films, reaching values of 4.0 and 0.1 GPa in absolute value respectively. Based on the calculated data of the paper and the literature, it is assumed that the reason of the arising macro- and microstresses is the formation of track defects in the film. At the maximum fluence of krypton ions irradiation with 5×1012 ion/cm2, the change in the electrical properties of the InSb heteroepitaxial film consists in an increase of resistivity and carrier concentration in more than 10 times. The mobility of charge carriers, the Hall constant and sensitivity to a magnetic field are significantly reduced.