Nanostructured TiAlCuN and TiAlCuCN coatings for spacecraft: effects of reactive magnetron deposition regimes and compositions

Abstract

Spacecraft are exposed to a number of factors in the outer space: irradiation by electron flows, high-energy ions, solar electromagnetic radiation, plasma irradiation, and a stream of meteorite particles. All these factors initiate various physical and chemical processes in spacecraft materials, which can eventually lead to failure. To ensure reliable operation of spacecraft, it is necessary to use protective coatings and special radiation-resistant materials. TiAlCuN and TiAlCuCN coatings were formed by reactive magnetron sputtering on different substrates: single-crystal silicon and Titanium Grade 2 wafers. Nitrogen was used as a reactive gas to form nitride coatings and acetylene was used to form carbonitride coatings. The elemental composition was studied by energy-dispersive X-ray (EDX) spectroscopy. The structural-phase state of the coatings was examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Mechanical properties, such as hardness and Young modulus, were investigated by nanoindentation using a CSM Instruments Nanohardness Tester NHT2. The influence of deposition parameters, such as Ti and Al contents, the degree of reactivity α, and carbonitride formation on the structure and their mechanical properties were considered. It was detected that Cu addition to the coatings has effects on crystallite and growth column size refinement in comparison with the TiAlN and TiAlCN analogues due to its segregation along crystalline boundaries, and thus, imparts better mechanical characteristics. The hardness of TiAlCuN and TiAlCuCN coatings varies in the range of H = 25-36 GPa and Young modulus - E = 176-268 GPa. The impact strength index and the H/E* ratio, as well as the plastic deformation resistance index H3/E*2, were calculated. Due to their high mechanical properties, the formed nitride and carbonitride coatings are promising for use in space technologies.