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dc.contributor.authorKhamets, A.L.-
dc.contributor.authorKhaliava, I.I.-
dc.contributor.authorSafronov, I.V.-
dc.contributor.authorFilonov, A.B.-
dc.contributor.authorMigas, D.B.-
dc.date.accessioned2023-11-30T07:01:52Z-
dc.date.available2023-11-30T07:01:52Z-
dc.date.issued2023-
dc.identifier.citationJpn. J. Appl. Phys. 2023; 62(SD):SD0804.ru
dc.identifier.urihttps://elib.bsu.by/handle/123456789/305310-
dc.description.abstractWe study the effect of morphology on the in- and cross-plane phonon thermal conductivity of the (001), (110), and (111) oriented Si/Ge multilayer films by means of non-equilibrium molecular dynamics at 300 K. The extended comparison of the estimated values for the multilayer films to one for the appropriate homogeneous Si and Ge films has been performed. The results revealed a significant advantage in reducing the thermal conductivity of the Si/Ge multilayer films compared to the referenced homogeneous Ge and Si films for the cross-plane transport regardless of the film orientation, and for the in-plane transport only for (001)/ 1 ¯ 10 , (110)/[001] directions with an increase in the number of periods, which indicated the prospects of such layered structures.ru
dc.description.sponsorshipThis work has been supported by the Belarusian National Research Program “Materials Science, New Materials and Technology.” D. B. M. acknowledges the support of the MEPhI Program Priority 2030 and the resources of NRNU MEPhI high-performance computing center.ru
dc.language.isoenru
dc.publisherInstitute of Physicsru
dc.rightsinfo:eu-repo/semantics/openAccessru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleOrientation and size effects on phonon thermal conductivity in silicon/germanium multilayer structuresru
dc.typearticleru
dc.rights.licenseCC BY 4.0ru
dc.identifier.DOI10.35848/1347-4065/acad0c-
dc.identifier.scopus85146710723-
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