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The Boron-Oxygen (BO) Defect Complex Induced by Irradiation with 23 GeV Protons in p-Type Epitaxial Silicon Diodes 166

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The Boron-Oxygen (BO) Defect Complex Induced by Irradiation with 23 GeV Protons in p-Type Epitaxial Silicon Diodes 8 0 2 1 7 70 4

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