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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/280313
Title: Electrical and optical properties of InAs/InSb/GaSb superlattices for mid-infrared applications
Authors: Christol, P.
Cuminal, Y.
Rodriguez, J. B.
Joullié, A.
Kononenko, V. K.
Afonenko, A. A.
Ushakov, D. V.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2006
Publisher: Ioffe Institute
Citation: Proceedings 14th Int. Symp. "Nanostructures: Physics and Technology" (St Petersburg, Russia, June 26-30, 2006), p. 176
Abstract: Electrical and optical investigations performed on type-II broken gap InAs/InSb/GaSb superlattices grown on GaSb substrate are reported. Inter-miniband transitions are identified by low temperature (80 K) spectra and photoresponse measurements on mesa pin diodes exhibited cut-off wavelength at around 6 µm whatever the temperature between 90 and 290 K. Hall measurements have been carried out on 300 periods SL grown on semi-insulating GaAs substrates. The variations versus temperature of carrier concentration and Hall mobility display a change in the type of conductivity of the SL at around 190 K.
URI: https://elib.bsu.by/handle/123456789/280313
Sponsorship: This work is partially supported by a cooperation project CNRS/NASB 2005-06 No. 18086. The authors would like to thank S. K. Haywood, Hull University, for low temperature absorption measurements.
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:Кафедра физики и аэрокосмических технологий. Статьи

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