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https://elib.bsu.by/handle/123456789/264779| Title: | Light emission from silicon with tin-containing nanocrystals |
| Authors: | Roesgaard, So. Chevallier, J. Gaiduk, P.I. Hansen, J.L. Jensen, P.B. Larsen, A.N. Svane, A. Balling, P. Julsgaard, B. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика ЭБ БГУ::ТЕХНИЧЕСКИЕ И ПРИКЛАДНЫЕ НАУКИ. ОТРАСЛИ ЭКОНОМИКИ::Электроника. Радиотехника |
| Issue Date: | 2015 |
| Publisher: | American Institute of Physics Inc. |
| Citation: | AIP Adv 2015;5(7). |
| Abstract: | Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si1-x-ySnxCy, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 to 900. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to 1017 and 5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed. |
| URI: | https://elib.bsu.by/handle/123456789/264779 |
| DOI: | 10.1063/1.4926596 |
| Scopus: | 84953888906 |
| Appears in Collections: | Статьи |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 1.4926596.pdf | 1,39 MB | Adobe PDF | View/Open |
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