Photosensitivity of the Structures on the Cu(In,Ga)(S,Se)2 Films Obtained by Thermal Treatment in the S and Se Vapors

Abstract

Using the method of simultaneous sulfurization and selenization of intermetallic Cu–In–Ga layers, single-phase thin films of the Cu(In,Ga)(S,Se)2(CIGSS) alloys are obtained. On these films, rectifying photosensitive surface–barrier structures In/p-CIGSS are obtained by vacuum thermal evaporation of pure In. The photosensitivity spectra of the originally obtained structures are studied. The effect of the composition of the alloy films and illumination conditions on the photoelectric parameters of new structures In/p-CIGSS is studied. It is concluded that the obtained CIGSS films are promising for fabrication of high-efficiency thin-film photoconverters.