MODELING OF RELAXED OPTICAL PHENOMENA IN SILICON, GERMANIUM, DIAMOND AND GRAPHITE

Abstract

The problem of modeling of processes of the irreversible interaction light and solids of elements of IV group (Si, Ge and C) is discussed. This problem is connected with the processes of the saturation the excitation of respective scattering centers. The possible cascades of these processes are analyzed. The correlation between nonequilibrium and irreversible phenomena are analyzed. Phase diagram of silicon was used for the kinetic modeling of the hierarchic processes of saturation of the excitation respective chemical bonds. Straight physical–chemical method was used for the modeling. Transitions between various phases of silicon and germanium, diamond–graphite, graphite–graphene are analyzed and estimated. The comparative analyses these results with experimental data is represented and discussed. The good concordance of experimental and theoretical data was received.