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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/261442
Title: Nanoengineered Gd 3 Al 2 Ga 3 O 12 Scintillation Materials with Disordered Garnet Structure for Novel Detectors of Ionizing Radiation
Authors: Korzhik, M.
Alenkov, V.
Buzanov, O.
Fedorov, A.
Dosovitskiy, G.
Grigorjeva, L.
Mechinsky, V.
Sokolov, P.
Tratsiak, Y.
Zolotarjovs, A.
Dormenev, V.
Dosovitskiy, A.
Agrawal, D.
Anniyev, T.
Vasilyev, M.
Khabashesku, V.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2019
Publisher: Wiley-VCH Verlag
Citation: Cryst Res Technol 2019;54(4).
Abstract: The search for engineering approaches to improve the scintillation properties of Gd 3 Al 2 Ga 3 O 12 crystals and enable their production technology is of current interest. This crystal, while doped with Ce, is considered a good multi-purpose scintillation material for detecting gamma-quanta and neutrons. It is observed that co-doping with Mg affected intrinsic defects in the crystal structure that create shallow electronic traps. Other point structure defects, which are based on local variations of the crystal stoichiometry, are significantly diminished by use of a co-precipitated raw material. Nano-structuring of the raw material enables production of a homogeneous precursor mixture for growing a crystal with minimal evaporation of Ga from the melt. The demonstrated nano-engineering approach increased the light yield from the crystal by approximately 20%, enabling its applications in well logging.
URI: https://elib.bsu.by/handle/123456789/261442
Scopus: 10.1002/crat.201800172
metadata.dc.identifier.scopus: 85062688184
Sponsorship: Government Council on Grants, Russian Federation
Appears in Collections:Статьи НИУ «Институт ядерных проблем»

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