Radiation degradation of bipolar transistor current gain

Abstract

Spatial distribution of nonequilibrium minority charge carriers in bipolar transistors before and during the radiation exposure is described. Radiation-induced changes in the input and output characteristics and the current gain under the 60Co 1.2 MeV γ-rays were calculated. It was shown that the collector current and current gain steadily fall due to irradiation in the considered range in the dose range 0-7 × 105 rad. The simulation results correlate well with the experimental data obtained at the Research and Production Corporation "Integral".