Displacement of Boron from the Silicon Crystal Nodes

Abstract

The process of boron displacement from the nodes into interstitial positions by interstitial Si atoms in silicon (Watkins effect) on the conditions of implantation and annealing has been investigated with help of X-ray diffraction and electrical methods. It was revealed that the efficiency of the Watkins substitution is determined by the ion current density (level of ionization). With increasing of the ionization level in the implanted layer during implantation or annealing (additional low-energy electron irradiation) the replacement process may be suppressed.