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dc.contributor.authorZaitsev, A. M.
dc.contributor.authorKazuchits, N. M.
dc.contributor.authorMoe, K. S.
dc.date.accessioned2021-03-24T12:26:13Z-
dc.date.available2021-03-24T12:26:13Z-
dc.date.issued2020
dc.identifier.citationМатериалы и структуры современной электроники : материалы IX Междунар. науч. конф., Минск, 14–16 окт. 2020 г. / Белорус. гос. ун-т ; редкол.: В. Б. Оджаев (гл. ред.) [и др.]. – Минск : БГУ, 2020. – С. 142-146.
dc.identifier.isbn978-985-881-073-3
dc.identifier.urihttps://elib.bsu.by/handle/123456789/257289-
dc.descriptionДефектно-примесная инженерия. Радиационные эффекты в полупроводниках
dc.description.abstractIt is shown that the luminescence center with zero-phonon line at 468 nm commonly seen in spectra of CVD-grown diamonds is associated with the vacancy clusters. Based on the results of the measurements performed on several samples doped with nitrogen we could make an assumption that the defects responsible for the 468 nm center are complexes of nitrogen, hydrogen and vacancies in negative charge state. These complexes are located at the walls of vacancy clusters. Taking into account high luminescence efficiency of the 468 nm center, we anticipate that this center could be used for detection of trace concentrations of vacancy clusters in CVD diamonds
dc.language.isoen
dc.publisherМинск : БГУ
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
dc.titleThe luminescence center with ZPL at 468 nm in CVD diamonds
dc.typeconference paper
Appears in Collections:2020. Материалы и структуры современной электроники

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