Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/256176Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Андреев, А. Д. | - |
| dc.contributor.author | Борздов, В. М. | - |
| dc.contributor.author | Дитковский, В. М. | - |
| dc.date.accessioned | 2021-02-12T12:53:52Z | - |
| dc.date.available | 2021-02-12T12:53:52Z | - |
| dc.date.issued | 1993 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Механика. – 1993. – № 3. – С. 27-29. | ru |
| dc.identifier.issn | 0321-0367 | - |
| dc.identifier.uri | https://elib.bsu.by/handle/123456789/256176 | - |
| dc.description.abstract | It is considerated influence of the drain voltage, dopant concentration, mean free path of the hot electrons in the MOSFET channel for temperature interval. It is noted that for conduction of acceleration tests is not necessary to stabilize temperature of the devices | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : Университетское | ru |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Оценка параметров, влияющих на ток подложки и деградацию МОП-ПТ в режиме разогрева электронов | ru |
| dc.type | article | ru |
| dc.rights.license | CC BY 4.0 | ru |
| Appears in Collections: | 1993, №3 (сентябрь) | |
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