Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/253989Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Grushevskaya, H. V. | - |
| dc.contributor.author | Krylov, G. G. | - |
| dc.date.accessioned | 2021-01-13T06:50:52Z | - |
| dc.date.available | 2021-01-13T06:50:52Z | - |
| dc.date.issued | 2020-07-27 | - |
| dc.identifier.citation | Semiconductors, 2020, Vol. 54, No. 12, pp. 1737-1739 | ru |
| dc.identifier.uri | https://elib.bsu.by/handle/123456789/253989 | - |
| dc.description.abstract | Charge carrier transport peculiarities stipulated by non-trivial topology of a quasi-relativistic graphene model are investigated. It has been demonstrated that the model predicts additional topological contributions such as Majorana-like mass-term correction to ordinary Ohmic component of current, spinorbital coupling and “Zitterbewegung”-effect corrections to conductivity in space and time dispersion regime. Phenomena of negative differential conductivity for graphene have been interpreted based on the proposed approach. | ru |
| dc.language.iso | en | ru |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Non-Abelian Properties of Charge Carriers in a Quasirelativistic Graphene Model | ru |
| dc.type | article | ru |
| dc.rights.license | CC BY 4.0 | ru |
| Appears in Collections: | Кафедра компьютерного моделирования (статьи) | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| semiconductors.pdf | 384,46 kB | Adobe PDF | View/Open |
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