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https://elib.bsu.by/handle/123456789/246357Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Новиков, А. П. | - |
| dc.contributor.author | Шилова, Е. А. | - |
| dc.contributor.author | Буйко, Л. Д. | - |
| dc.contributor.author | Зайков, В. А. | - |
| dc.date.accessioned | 2020-07-20T08:48:33Z | - |
| dc.date.available | 2020-07-20T08:48:33Z | - |
| dc.date.issued | 1996 | - |
| dc.identifier.citation | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1996. – № 1. – С. 24-26. | ru |
| dc.identifier.issn | 0321-0367 | - |
| dc.identifier.uri | https://elib.bsu.by/handle/123456789/246357 | - |
| dc.description.abstract | Thermal stability at the interface of vanadium/amorphous carbon (V/a-C) and tantalum/amorphous carbon (Ta/a-C) systems have been investigated by the methods of ТЕМ, RBS, AES, and Raman spectroscopy. Thermal annealing of V/a-C, Ta/a-C thin-film structures has been carried out in a vacuum furnace at temperatures ranged from 100 to 1000 C. The conducted investigations have revealed that 400 C and 700 C are the threshold temperatures at which diffusion of carbon atoms to vanadium and tantalum films, respectively, begins to proceed and inclusions of carbide phases are formed. Regularities of structural changes and reactions at the metal/a-C interface are discussed for a group of refractory metals | ru |
| dc.language.iso | ru | ru |
| dc.publisher | Минск : Універсітэцкае | ru |
| dc.rights | info:eu-repo/semantics/openAccess | en |
| dc.subject | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика | ru |
| dc.title | Термическая стабильность границы раздела металл/а-C в условиях вакуумного отжига | ru |
| dc.type | article | ru |
| dc.rights.license | CC BY 4.0 | ru |
| Appears in Collections: | 1996, №1 (январь) | |
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