Ascertainment of the Reason for the Increase in the Anisotropy Parameter of Thermo-EMF for Transmutation-Doped n-Si with Increasing Annealing Temperature

Abstract

The experimental data on measuring of thermoelectromotive force (thermo-emf), tenso-thermo-emf and tensoresistance of the transmutation-doped and ordinary n-Si crystals, which subjected to annealing at 1073 ≤ Т ann ≤ 1473 K during 2h, and cooled from the annealing temperatures to the room temperature with rates of 1 and 15 K/min, were presented. On the basis of the obtained experimental data the anisotropy parameter of thermo-emf of electron-phonon drag and the anisotropy parameter of mobility were determined. It is found that in the transmutation-doped n-Si crystals the increase of the anisotropy parameter of thermo-emf М = α II ph /α ⊥ ph with rising of the annealing temperature was caused by the increase of the longitudinal phonon component of thermoemf (α II ph ), while the transversal component (α ⊥ ph ) is reduced.