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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/233832
Title: Влияние электронно-ионной бомбардировки на процесс формирования и свойства пленок сложного состава ионно-плазменным методом
Other Titles: The Ion-Plasma Electron-Ion Bombardment Influence on the Complex Films' Formation Process and Properties / Yu.S. Zhidik, A.A. Chistoedova, E.V. Zhidik, T.I. Danilina
Authors: Жидик, Ю. С.
Чистоедова, А. А.
Жидик, Е. В.
Данилина, Т. И.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2019
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом = Interaction of Radiation with Solids : материалы 13-й Междунар. конф., Минск, Беларусь, 30 сент. – 3 окт. 2019 г. / редкол.: В. В. Углов (отв. ред.) [и др.]. – Минск : БГУ, 2019. – С. 446-449.
Abstract: В работе приведены результаты исследования механизма формирования стехиометрических соединений тонких пленок сложного состава, формируемых методом ионно-плазменного распыления в среде активных газов. Исследуется кинетика образования и роста пленок сложного состава, исследуется изменение характеристик формируемых на основе тонких пленок элементов микроэлектроники при их электронно-ионной бомбардировке.
Abstract (in another language): The paper presents the results of the study on the stoichiometric compounds formation mechanism of complex thin films formed with ion-plasma sputtering in the reactive gases environment. The kinetics of the complex films formation and growth is studied, and the change in characteristics of microelectronics elements formed on the basis of thin films during their electron-ion bombardment is investigated. As a result of the conducted research, it was established that, during ion-plasma sputtering on metal targets in the reactive gases environment, the formation of final compounds occurs on the substrate receiving atoms and ions of the metal and also molecules and ions of the working atmosphere gas. It was established that, in the complex thin films deposition process done by the ion-plasma methods, the substrate temperature significantly increases even at low discharge power. At the same time, directly heating the substrate to form stoichiometric complex films plays the most important role in contribution to the formation of the crystalline phase. However, the plasma effect is manifested not only in the heating of the substrate surface but also in the appearance of a negative potential on it. It was concluded that the films' formation of with ion-plasma methods is accompanied, on the one hand, by a negative impact of electron-ion bombardment on the substrate with a growing film, and on the other hand, low-energy electron-ion bombardment contributes to the formation of stoichiometric films.
Description: Секция 5. Влияние излучений на структуру и свойства покрытий = Section 5. Radiation Influence on Coatings Structure and Properties
URI: http://elib.bsu.by/handle/123456789/233832
ISSN: 2663-9939
Sponsorship: Исследование выполнено при финансовой поддержке РФФИ в рамках научного проекта № 18-32-00708.
Appears in Collections:2019. Взаимодействие излучений с твердым телом = Interaction of Radiation with Solids

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