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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/233822
Title: Формирование и исследование характеристик тонких пленок оксидов меди и цинка и гетероструктур на их основе
Other Titles: Formation and Study of the Characteristics of Copper and Zinc Oxide Thin Films and Heterostructures / N.V. Tarasenko, S.T. Pashayan, A.V. Butsen, E.A. Shustova, N.N. Tarasenka, V.M. Anishchik, V.V. Malyutina-Bronskaya
Authors: Тарасенко, Н. В.
Пашаян, С. Т.
Буцень, А. В.
Шустова, Е. А.
Тарасенко, Н. Н.
Анищик, В. М.
Малютина-Бронская, В. В.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2019
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом = Interaction of Radiation with Solids : материалы 13-й Междунар. конф., Минск, Беларусь, 30 сент. – 3 окт. 2019 г. / редкол.: В. В. Углов (отв. ред.) [и др.]. – Минск : БГУ, 2019. – С. 413-416.
Abstract: В работе обсуждаются результаты исследования электронных и оптических характеристик гетеростурктур на основе оксидов меди и цинка, полученных методом магнетронного осаждения. ZnO был использован в качестве полупроводника n-типа, а пленка оксида меди - в качестве полупроводника p-типа. Обсуждаются результаты исследования вольт-амперных характеристик структуры ITO/ZnO/Cu 2 O(CuO)/Ag, снятые в темноте и в условиях солнечного освещения (100 мВт/см2).
Abstract (in another language): In this paper the results of the optical and i-V characterization of the ZnO and ZnO/CuO films prepared by magnetron sputtering are discussed. The study of the surface morphology of the prepared films showed that their surface structure is nearly uniform with an average grain size below 50 nm. The absorption spectra of the ZnO films consist of a broad band in the UV region with an increase in the absorption near the bandgap (~ 370 nm). The bandgap for the obtained zinc oxide films was around ~ 3.3 eV, that is slightly lower than the value for the bulk material (Eg = 3.37 eV) possibly due to the formation of defects. The studies of the optical properties of two-layer films showed an increase in absorption in the region above 400 nm corresponding to the Cu2O phase and absorption band at 600–700 nm attributable to CuO. The Tauc plots allowed estimating the bandgap values of the film to be 2.58 eV and 1.8 eV, corresponding well to direct bandgap Cu2O and indirect gap CuO, respectively. These results indicate that the obtained films are biphasic, that was also proved by the results of Raman analysis that revealed the formation of mixed copper oxides phases with a predominance of the Cu2O phase in the film formed using the described deposition and annealing procedure. The i-V characteristics of the structures studied in the dark and sunlight illumination (100 mW/cm2) conditions allowed to find the forward threshold voltage (V on ) of the n-ZnO/p-CuO heterojunction to be 2.0 V. The increase in current was observed under the illumination, while the direct and reverse switching indicates a photosensitive structure. Thus, the fabricated ZnO/CuO heterojunction can be used for fabrication of inexpensive diodes for photodetectors, solar cells and gas sensors.
Description: Секция 4. Формирование наноматериалов и наноструктур = Section 4. Formation of Nanomaterials and Nanostructures
URI: http://elib.bsu.by/handle/123456789/233822
ISSN: 2663-9939
Sponsorship: Работа выполнялась при финансовой поддержке НАН Беларуси в рамках проекта «Конвергенция-2020-2.4.06» и частично Белорусского республиканского Фонда фундаментальных исследований (проект БРФФИ Ф18СРБГ– 004).
Appears in Collections:2019. Взаимодействие излучений с твердым телом = Interaction of Radiation with Solids

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