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https://elib.bsu.by/handle/123456789/226331| Title: | Эмиссия горячих электронов в подзатворный диэлектрик МОП-ПТ с высоколегированной подложкой |
| Authors: | Андреев, А. Д. Комаров, Ф. Ф. Михей, В. Н. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1998 |
| Publisher: | Минск : Універсітэцкае |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1998. – № 2. – С. 23-25. |
| Abstract: | Substrate ionization currents are measured and electron mean free path and energy are defined for dopant level substrate 7-1023 m-3 MOSFET. The potential barrier across Si-SiO2 division and emission electron currents are calculated in the range date voltage. Substrate and emission current gradients have contrarious signes. These peculirities may be caused by strengthening of impact ionization. |
| URI: | http://elib.bsu.by/handle/123456789/226331 |
| ISSN: | 0321-0367 |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 1998, №2 (май) |
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