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Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques 183

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Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques 3 6 2 1 3 7 2

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