Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/223927| Title: | Применение метода конечных элементов для расчета характеристик модели кубита в кремнии |
| Authors: | Левчук, Е. А. Макаренко, Л. Ф. |
| Issue Date: | 2014 |
| Publisher: | Минск : Изд. центр БГУ |
| Citation: | Сборник научных работ студентов Республики Беларусь "НИРС 2013" / редкол. : А. И. Жук (пред.) [и др.]. - Минск : Изд. центр БГУ, 2014. - С. 26 |
| Abstract (in another language): | The application of the finite element method for simulation the effect of electric field on shallow donor states near the surface of the semiconductor is considered. The influence of geometrical parameters on the ionization potential of the donor is studied. Peculiarities of donor states for different gate configurations are investigated |
| URI: | http://elib.bsu.by/handle/123456789/223927 |
| ISBN: | 978-985-553-227-0 |
| Appears in Collections: | Сборник научных работ студентов Республики Беларусь "НИРС 2013" |
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