Formation of light-emitting Si:Er layers by ion implantation and pulsed annealing

Abstract

In this work the formation of Si:Er solid solutions and erbium silicide layers by means of Er ion implantation and pulsed annealing by nanosecond ion and laser beams was carried out. The dependence of Er atoms redistribution in Si and also the microstructure and phase composition of Si:Er layers on the implanted fluence and regimes of pulsed annealing was determined. It is shown that Si:Er layers obtained using pulsed and thermal treatments have photoluminescent properties in the near infrared region at 77 K. These properties are manifested by the intensive signals at Л = 1.13 and 1.54 ц т.