Please use this identifier to cite or link to this item:
https://elib.bsu.by/handle/123456789/223120| Title: | Высокоэнергетичная ионная имплантация в алмаз |
| Authors: | Филипп, А. Р. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 1997 |
| Publisher: | Минск : Універсітэцкае |
| Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 1997. – № 2. – С. 22-26. |
| Abstract: | Some peculiarities of defect production in diamond irradiated with high energy ions have been investigated. Defect structure in subsurface layer and in the layer located deeper than projected ion range are considered on a basis of ion track production and defect diffusion, respectively. |
| URI: | http://elib.bsu.by/handle/123456789/223120 |
| ISSN: | 0321-0367 |
| Sponsorship: | Данная работа была частично профинансирована в рамках проекта INTAS-94-1982. |
| Licence: | info:eu-repo/semantics/openAccess |
| Appears in Collections: | 1997, №2 (май) |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.