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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/206552
Title: Лазерный отжиг многослойной полупроводниковом структуры GaAIAs / GaAs / GaAIAs / GaAI
Other Titles: Laser annealing of multilayer semiconductor structure GaAIAs / GaAs / GaAIAs / GaAI / M.I.Markevich, A.S.Podol’tsev, F.A.Piskunov, Chen Chao, Yi Luo
Authors: Маркевич, М. И.
Подольцев, А. С.
Пискунов, Ф. А.
Чень Чао
Лю И
Issue Date: 1999
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом: Материалы III междунар. науч. конф., 6-8 окт. 1999 г., Минск: В 2 ч. Ч.2. — Мн.: БГУ, 1999. — С. 68-69.
Abstract: В настоящей работе проведено математическое моделирование лазерного отжига многослойной полупроводниковой структуры GaAIAs/ GaAs/GaAIAs/GaAs. Показано, что в зависимости от длительности импульса, плотности мощности излучения по разному происходит процесс подлегирования алюминием слоя арсенида галлия.
Abstract (in another language): Pulsed laser annealing of semiconductor structures is a promising method of material processing. It opens wide opportunities in manufacturing of the discretic semiconductor circuits. Strongly non-uniform absorption of radiation by a materials surface can lead to undesirable results of processing. In this connection searches of new perspective methods of laser processing are required. Use of pulsing laser radiation permits to make the annealing of a separate layer. Small time of laser effect causes an insignificant solid-phase diffusion of atoms of an impurity between layers. The present research uses mathematical modelling to analyze temperature redistribution in a multilayer compound, such as GaAIAs/GaAsGaAIAs/GaAs structure, during pulsed laser processing.The distribution of temperatures in each layer of the compound indicates to a possibility of annealing of GaAs under the layer of GaAIAs while keeping the diffusion af atoms from adjacent layers negligible.
URI: http://elib.bsu.by/handle/123456789/206552
ISBN: 985-445-237-9
Appears in Collections:1999. Взаимодействие излучений с твердым телом

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