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dc.contributor.authorПопок, В. Н.-
dc.contributor.authorАзарко, И. И.-
dc.contributor.authorКарпович, И. А.-
dc.contributor.authorГнатович, В.-
dc.contributor.authorГавранек, В.-
dc.contributor.authorПержинг, В.-
dc.date.accessioned2018-08-28T08:21:56Z-
dc.date.available2018-08-28T08:21:56Z-
dc.date.issued1999-
dc.identifier.citationВзаимодействие излучений с твердым телом: Материалы III междунар. науч. конф., 6-8 окт. 1999 г., Минск: В 2 ч. Ч.1. — Мн.: БГУ, 1999. — С. 142-144.ru
dc.identifier.isbn985-445-236-0-
dc.identifier.urihttp://elib.bsu.by/handle/123456789/204409-
dc.description.abstractПредставлены результаты исследований пленок полиамида, имплантированных ионами В* в несколькo энергиями 60, 80 и 100 кэВ и дозами 3x1016 см'2. Обнаружено аномальное уменьшение концентрации паргцентров (я-элекгронных радикалов) при многоступенчатой имплантации с увеличением энергии каждого пос. внедрения, что свидетельствует о формировании новых углеродных фаз в слоях полимера, по многократному радиационному воздействию.ru
dc.language.isoruru
dc.publisherМинск : БГУru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleПарамагнитные дефекты в пленках полиамида многоступенчатой ионной имплантацииru
dc.title.alternativeParamagnetic defects in multistage ion-implanted polyamide films / V. N. Popok, I. I. Azarko, I. A. Karpovich, V. Hnatowicz, V. Havranek, V. Perinaru
dc.typeconference paperru
dc.description.alternativeThe growing interest in the recent years in the ion implantation of polymer materials is due to the possibility using as a new materials for functional electronical and optical elements fabrication. The last investigations show that th< implantation to polymer films allows to form a buried conductive layers and opens up the possibility for transistor-like decreation. Therefore the necessity to estimate the correlation between the polymer structure transformation and oplimplantation regimes exist. Thin (40-50 pm) two-layer polymer films consisted of polyethylene and polyamide-6 are investigated. Implants with boron ions to doses of 3x1016 cm'2 carried out into polyamide layer in multistage regimes with energies of 60, 80 and keV. For first group of samples energies are increased from 60 to 100 keV for each subsequent stage. For second oienergies are decreased from stage to stage. The thick of radiation-damaged layer are estimated from TRIM-code calculation and experimental results on the be ions ranges and amount of 500 nm for energy of 100 keV, 430 nm for 80 keV and 350 nm for 60 keV. It was found that the multistage implantation performed under conditions where the implantation energy in crea from step to step results in the decrease of the paramagnetic centres concentration in the implanted layer and narrowing of ESR linewidth. It can be inferred that under these implantation conditions the restructuarization of the polymer layer which pass repeatedly occurs. This restructualization being accompanied with the compensation of the terminated carbon bonds strong exchange interaction between ^-electrons in the implanted polymer. By contrast, the decrease in the ion energy the implantation leads to the progressive accumulation of the paramagnetic centres in the implanted layers, i.e. the radie produced in the earlier implantation steps do not exhibit serious degradation during the subsequent implantation. The multistaion implantation accompanied with the decreasing in the implantation energy thus permits to create the highly conduct: channels between the surface and the buried conducting carbonaceous layer appearing in the interior of the implanted regi that opens up the fresh opportunities for fabrication the polymer-based planar functional electronic device.ru
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