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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/204310
Title: Идентификация моделей радиационных дефектов в кремнии для прогнозирования радиационной стойкости детекторов излучений
Other Titles: Identification of radiation defect models to predict hardness of silicon detectors for ionizing radiation / L.F.Makarenko, V.Yu.Yavid, Ya.l.Latushko, N.I.Zamiatin
Authors: Макаренко, Л. Ф.
Явид, Ю. А.
Латушко, Я. И.
Замятин, Н. И.
Issue Date: 2001
Publisher: Минск : БГУ
Citation: Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. 178-180
Abstract: Показано, что общепринятые модели электронной структуры ряда радиационных дефектов в кремнии не являются адекватными. Для прогностического моделирования характеристик облученных кремниевых детекторов частиц требуется их пересмотр.
Abstract (in another language): The validity of a single-level model to interpret temperature dependencies of charge carrier concentration in n-Si crystals irradiated by Co-60 gamma-rays is investigated. It is shown that the consideration of a vacancy-oxygen complex (the A-center) in silicon as a isolated monovalent defect vi/ith energy level close to Ec-0.17eV does not allow to describe adequately Hall effect data for crystals in which the A-center is dominant. From carbon related complexes the single-level model is adequate only for interstitial carbon C. The explanation of experimental data for a CrCs complex requires more complex models. The acceptable description of experimental dependencies of n(T) can be achieved only within the framework of various two-level models. However the acceptance of any of them entails a conclusion that the investigated radiation defects are coupled in pairs even at very low irradiation fluences.
URI: http://elib.bsu.by/handle/123456789/204310
ISBN: 985-445-236-0
Appears in Collections:2001. Взаимодействие излучений с твердым телом

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