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https://elib.bsu.by/handle/123456789/204298| Заглавие документа: | Влияние ионной имплантации на дефектность МДП-структур |
| Другое заглавие: | The ion implantation effect on MIS-structure defects / V. V. Andreev, V. G. Baryshev, G. G. Bondarenko, A. A. Stolyarov, S. A. Loskutov, I. V. Chukhraev |
| Авторы: | Андреев, В. В. Барышев, В. Г. Бондаренко, Г. Г. Столяров, А. А. Лоскутов, С. А. Чухраев, И. В. |
| Тема: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Дата публикации: | 1999 |
| Издатель: | Минск : БГУ |
| Библиографическое описание источника: | Взаимодействие излучений с твердым телом: Материалы III междунар. науч. конф., 6-8 окт. 1999 г., Минск: В 2 ч. Ч.1. — Мн.: БГУ, 1999. — С. 89-91. |
| Аннотация: | Исследовано влияние ионной имплантации бора на дефектность диэлектрических слоев SiO2 и Si02-<t>CC (фосфорно-силикатное стекло) МДП-структур. Показано, что под действием ионной имплантации в пленках двуокиси кремния, пассивированных фосфорно-силикатным стеклом, в отличие от пленок SiO2 наблюдается увеличение дефектности. Дефектность диэлектрических слоев на рабочих пластинах превышает дефектность на пластинах «спутниках». Обнаруженные дефекты могут быть устранены термическим отжигом. |
| Аннотация (на другом языке): | Theboron ion implantation effect on MIS-structure SiO2 and SiO2- PSG (phosphosilicate glass) layer defects has been investigated. The test MIS capacitors of 1,5 mm2 area fabricated on phosphorus-doped (resistivity 4.5 n-crn) Si <100> wafers were. The boron ion implantation effect on MIS-structure SiO2 and SiO2- PSG (phosphosilicate glass) layer defects has been investigated. The test MIS capacitors of 1,5 mm2 area fabricated on phosphorus-doped (resistivity 4.5 n-crn) Si <100> wafers were studied. Silicon dioxide of thickness 100 nm was thermally grown in O2 at IOOO0C with an addition of 3% HCI. The PSG films were 10 nm thick. In order to eliminate the gate insulator defect wafer area- and batch- variation effect on the obtained experimental results the insulating properties of MIS-structure insulator layers on the wafers that were fabricated in different batches were 10 nm thick. In order to eliminate the gate insulator defect wafer area- and batch- variation effect on the obtained experimental results the insulating properties of MIS-structure insulator layers on the wafers that were fabricated in different batches and placed in the centre and periphery of the wafers were investigated. It was found that the gate insulator defects can widely vary from one wafer batch to another being similar for the wafers fabricated within one batch. The silicon dioxide defect value was determined to be of the same order within a wafer. Since the gate insulator defects value differs from batch to batch, the studies of the ion-implantation effect on the MIS-structure insulator layer defects were performed using the wafers oxidized within one batch. It was shown that the defects increase at silicon dioxide passivated by phosphosilicate glass under ion implantation unlike the SiO2 films. Insulator layer defects on the operational wafers exceed the defects on the auxiliary wafers. Within one batch. It was shown that the defects increase at silicon dioxide passivated by phosphosilicate glass under ion implantation unlike the SiO2 films. Insulator layer defects on the operational wafers exceed the defects on the auxiliary wafers. These defects can be annihilated by thermal anneal. |
| URI документа: | http://elib.bsu.by/handle/123456789/204298 |
| ISBN: | 985-445-236-0 |
| Располагается в коллекциях: | 1999. Взаимодействие излучений с твердым телом |
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