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https://elib.bsu.by/handle/123456789/203865| Title: | Высокоскоростное вч-магнетронное реактивно-ионное травление кварца |
| Other Titles: | High-speed hf-magnetron reactive - ion etching of quartz / V.M.Vetoshkin, P.N.Krylov |
| Authors: | Ветошкин, В. М. |
| Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
| Issue Date: | 2001 |
| Publisher: | Минск : БГУ |
| Citation: | Взаимодействие излучений с твердым телом: материалы IV Междунар. науч. конф., 3-5 окт. 2001 г., Минск. — Мн.: БГУ, 2001. — С. |
| Abstract: | Исследовано ВЧ-магнетронное реактивно-ионное травление кварца в CF4, SFe, CHFj. Определены скорости травления Б зависимости от давления рабочего газа, мощности излучения. Равномерность травления ±5 % на площади 100x100 мм обеспечивается механическим сканированием магнитной системы. В режиме травления без сканирования получены углубления до 150 мкм диаметром 4 мм с вертикальными стенками. |
| Abstract (in another language): | In work the experimental results on reactive-ion etching of quartz are indicated. For increase of ionization efficiency and for increase of etching velocity the magnetron located under the HF-electrode is used. The uniform of etching is ensured with mechanical scanning of the magnetron and makes +5 % on square 100x100 mm. Quartz etching in CF4, SFe and CHF3 is investigated. The optimization of quartz etching was conducted by a variation of operating pressure of jet gas in the camera, by a variation of gas cost and by variation of denseness of a capacity the HF-discharge. The influence of cathode material to quality of quartz surface is revealed. The optimum results are obtained for the coating of the cathode by manufactured polycorundum substrates. The etching in SFe is accompanied by formation of a poly- meric film on walls of the camera and on the cathode outside of the zone of scanning. For etching in CF4 the films formation was not observed. The optimum pressure for etching in this gases has made 5 Pa, etching velocity 800 A/mines in SFe and 1500 A/mines in CF4 for density of capacity 200 W- The higher velocities of etching were obtained for CHF3 employment. For pressure 1 Pa the etching velocity of quartz has made 0,9 microns / mines (density of capacity 500W) and 1,6 microns / mines (density of capacity 700W). The reginne of etching without scanning of the magnetron with accommodation of exemplar in erosion zone was used for formation recesses of small square. The etching velocity has made 2,5 microns / mines (density of capacity 500W) and 4,2 microns / mines (density of capacity 700W). The 150 microns recesses by a diameter of 4 mm in quartz were obtained. The increase of etching velocity from 4,2 microns / mines up to 2,5 microns / mines was observed for formation recesses from 150 microns up to 250 microns. |
| URI: | http://elib.bsu.by/handle/123456789/203865 |
| ISBN: | 985-445-236-0 |
| Appears in Collections: | 2001. Взаимодействие излучений с твердым телом |
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