Аппроксимация ВАХ высоколегированного А-канального МОП-транзистора

Abstract

The approximation of the high-dopant MOSFETs current-voltage characteristic before saturation is offered. This method allows to calculate drain current in the case when there is discrepancy of a drain current saturation voltage and effective gate voltage. It is shown that account of the drain voltage dependence of mobility near drain is not necessary. That approximation substrate doped profile near surface silicon and of the inversion layer localization account of the doped level substrate dependence of channel length is necessary for calculation source and drain depletion layers meet.