Logo BSU

Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/195242
Title: Аппроксимация ВАХ высоколегированного А-канального МОП-транзистора
Authors: Андреев, Альберт Данилович
Валиев, Александр Анатольевич
Жевняк, Олег Григорьевич
Мулярчик, Степан Григорьевич
Шевкун, Игорь Михайлович
Issue Date: 2004
Publisher: Минск : БГУ
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2004. - № 3. – С. 42-48.
Abstract: The approximation of the high-dopant MOSFETs current-voltage characteristic before saturation is offered. This method allows to calculate drain current in the case when there is discrepancy of a drain current saturation voltage and effective gate voltage. It is shown that account of the drain voltage dependence of mobility near drain is not necessary. That approximation substrate doped profile near surface silicon and of the inversion layer localization account of the doped level substrate dependence of channel length is necessary for calculation source and drain depletion layers meet.
URI: http://elib.bsu.by/handle/123456789/195242
ISSN: 0321-0367
Licence: info:eu-repo/semantics/openAccess
Appears in Collections:2004, №3 (сентябрь)

Files in This Item:
File Description SizeFormat 
42-48.pdf2,8 MBAdobe PDFView/Open
Show full item record Google Scholar

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.