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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/195242
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dc.contributor.authorАндреев, Альберт Данилович-
dc.contributor.authorВалиев, Александр Анатольевич-
dc.contributor.authorЖевняк, Олег Григорьевич-
dc.contributor.authorМулярчик, Степан Григорьевич-
dc.contributor.authorШевкун, Игорь Михайлович-
dc.date.accessioned2018-05-16T12:27:32Z-
dc.date.available2018-05-16T12:27:32Z-
dc.date.issued2004-
dc.identifier.citationВестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2004. - № 3. – С. 42-48.ru
dc.identifier.issn0321-0367-
dc.identifier.urihttp://elib.bsu.by/handle/123456789/195242-
dc.description.abstractThe approximation of the high-dopant MOSFETs current-voltage characteristic before saturation is offered. This method allows to calculate drain current in the case when there is discrepancy of a drain current saturation voltage and effective gate voltage. It is shown that account of the drain voltage dependence of mobility near drain is not necessary. That approximation substrate doped profile near surface silicon and of the inversion layer localization account of the doped level substrate dependence of channel length is necessary for calculation source and drain depletion layers meet.ru
dc.language.isoruru
dc.publisherМинск : БГУru
dc.rightsinfo:eu-repo/semantics/openAccessen
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleАппроксимация ВАХ высоколегированного А-канального МОП-транзистораru
dc.typearticleru
Appears in Collections:2004, №3 (сентябрь)

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