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https://elib.bsu.by/handle/123456789/194974
Title: | Преципитация GeAs в Si0,V5Ge0,25-сплавах при высокодозной имплантации ионов мышьяка |
Authors: | Гайдук, П. И. |
Keywords: | ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика |
Issue Date: | 2000 |
Publisher: | Минск : Універсітэцкае |
Citation: | Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2000. - № 1. – С. 3-8. |
Abstract: | The evolution of GeAs precipitates in arsenic-implanted (165 keV, 2.dxl016 cm’2) epitaxially grown, relaxed SiojsGeo2S alloys have been studied as a function of the temperature of rapid thermal annealing (RTA). It was found by TEM/x-ray microanalysis that the composition of the alloy around the precipitates is strongly nonhomogenuous and is varied between 10—12% and 25%. High temperature RTA (1030°C for 15 s) results in the formation of GeAs precipitates of two different average sizes: namely, around 15 nm and 55 nm. The precipitates of a larger size are located in the near surface region and distributed preferably along [110] directions. The compositional and electronic properties of the obtained structure are considered and possible applications are suggested. |
URI: | http://elib.bsu.by/handle/123456789/194974 |
ISSN: | 0321-0367 |
Licence: | info:eu-repo/semantics/openAccess |
Appears in Collections: | 2000, №1 (январь) |
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