Преципитация GeAs в Si0,V5Ge0,25-сплавах при высокодозной имплантации ионов мышьяка

Abstract

The evolution of GeAs precipitates in arsenic-implanted (165 keV, 2.dxl016 cm’2) epitaxially grown, relaxed SiojsGeo2S alloys have been studied as a function of the temperature of rapid thermal annealing (RTA). It was found by TEM/x-ray microanalysis that the composition of the alloy around the precipitates is strongly nonhomogenuous and is varied between 10—12% and 25%. High temperature RTA (1030°C for 15 s) results in the formation of GeAs precipitates of two different average sizes: namely, around 15 nm and 55 nm. The precipitates of a larger size are located in the near surface region and distributed preferably along [110] directions. The compositional and electronic properties of the obtained structure are considered and possible applications are suggested.