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Please use this identifier to cite or link to this item: https://elib.bsu.by/handle/123456789/194974
Title: Преципитация GeAs в Si0,V5Ge0,25-сплавах при высокодозной имплантации ионов мышьяка
Authors: Гайдук, П. И.
Keywords: ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика
Issue Date: 2000
Publisher: Минск : Універсітэцкае
Citation: Вестник Белорусского государственного университета. Сер. 1, Физика. Математика. Информатика. – 2000. - № 1. – С. 3-8.
Abstract: The evolution of GeAs precipitates in arsenic-implanted (165 keV, 2.dxl016 cm’2) epitaxially grown, relaxed SiojsGeo2S alloys have been studied as a function of the temperature of rapid thermal annealing (RTA). It was found by TEM/x-ray microanalysis that the composition of the alloy around the precipitates is strongly nonhomogenuous and is varied between 10—12% and 25%. High temperature RTA (1030°C for 15 s) results in the formation of GeAs precipitates of two different average sizes: namely, around 15 nm and 55 nm. The precipitates of a larger size are located in the near surface region and distributed preferably along [110] directions. The compositional and electronic properties of the obtained structure are considered and possible applications are suggested.
URI: http://elib.bsu.by/handle/123456789/194974
ISSN: 0321-0367
Appears in Collections:2000, №1 (январь)

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