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|Title:||Electronic properties of Bi-Sn diluted alloys|
|Authors:||Fedotov, A. S.|
Svito, I. A.
Gusakova, S. V.
Shepelevich, V. G.
Mazanik, A. V.
Fedotov, A. K.
|Keywords:||ЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физика|
|Publisher:||2015 Elsevier Ltd. All rights reserved|
|Citation:||Materials Today: Proceedings 2 ( 2015 ) 629 – 636|
|Abstract:||The dependences of resistivity, magnetoresistance, Hall effect and thermoEMF in the 4 – 300 K temperature range and in magnetic fields up to 8 T were studied for the Bi1-xSnx (0 ≤ x ≤ 0.006) diluted alloys produced by the melt spinning method. The observed decrease of conductivity and magnetoresistance with doping is explained in terms of charge carriers scattering on tin atoms, whereas the shift of the Hall and Seebeck coefficients to the range of positive values is connected with enhanced contribution of holes in the charge transport.|
|Appears in Collections:||Кафедра энергофизики|
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