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dc.contributor.authorStanchik, A. V.-
dc.contributor.authorGremenok, V. F.-
dc.contributor.authorBashkirov, S. A.-
dc.contributor.authorTivanov, M. S.-
dc.contributor.authorJuškėnas, R. L.-
dc.contributor.authorNovikov, G. F.-
dc.contributor.authorGiraitis, R.-
dc.contributor.authorSaad, A. M.-
dc.date.accessioned2018-01-24T11:30:03Z-
dc.date.available2018-01-24T11:30:03Z-
dc.date.issued2018-
dc.identifier.citationSemiconductors. – 2018. – Volume 52, No 2 – Pages 215-220.ru
dc.identifier.issn1063-7826 Print-
dc.identifier.issn1090-6479 Online-
dc.identifier.urihttp://elib.bsu.by/handle/123456789/189346-
dc.description.abstractAbstract—Cu2ZnSnSe4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu–Zn–Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu2ZnSnSe4 films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.ru
dc.language.isoenru
dc.publisherInstitute of Physics Publishingru
dc.subjectЭБ БГУ::ЕСТЕСТВЕННЫЕ И ТОЧНЫЕ НАУКИ::Физикаru
dc.titleMicrostructure and Raman scattering of Cu2ZnSnSe4 thin films deposited onto flexible metal substratesru
dc.typearticleru
Appears in Collections:Кафедра физики твердого тела и нанотехнологий (статьи)

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