Тензосопротивление трансмутационно легированных кристаллов кремния

Abstract

Представлены экспериментальные данные по измерению тензосопротивления и тензо-холл-эффекта трансмутационно легированных кристаллов n-Si в исходном состоянии (т.е. после стандартного технологического отжига) и после высокотемпературного отжига (при Тотж. = 1200 С в течение t = 2 ч) при разных скоростях охлаждения от температуры отжига до комнатной (охл. = 1 и 15 С/мин). В результате проведенных экспериментов обнаружено, что при охлаждении трансмутационно легированных кристаллов n-Si со скоростью 15 С/мин вследствие образования глубоких уровней, чувствительных к величине одноосного механического напряжения, возникает эффект отрицательного тензосопротивления = The experimental data on the measurement of tensoresistance and tenso-Hall-effect of the transmutation doped n-Si crystals in the initial state (i.e., after a standard annealing process) and after high-temperature annealing at different cooling rates from the annealing temperature to the room temperature have been presented. The samples in the initial state were characterized by the following parameters: n0 (77 K)  NP  5.6  1013 cm-3,  (77 K) = 21600 cm2/Vs. Three groups of samples were cut from the ingot after obtaining crystallographic orientation in the direction [001] with an accuracy no worse than 15'. In the initial state the dependences n0 = n0 (Т) and Х /0 = f (X) were measured on one of these groups. Two other groups of samples were subjected to the same high-temperature annealing (Тann = 1200 оС during 2 h), but were cooled from the annealing temperature with the different rates (cl = 1 and 15 оС/min). As a result of the carried out experiments it was found that under cooling of the transmutation-doped n-Si crystals with the rate of 15 оС/min due to the formation of deep levels, which are sensitive to the value of uniaxial mechanical stress, the effect of negative tensoresistance appears