Modification of amorphous Si-rich SiNx matrix by irradiation with swift heavy ions

Abstract

The effects of 200 MeV-Xe+ irradiation with fluencies of (109-1014) cm-2 on the phase-structural transformation of Si-rich SiNx film deposited on Si substrate by LPCVD have been reported. It has been shown from RS data that the SHI irradiation results in the dissolution of amorphous Si nanoclusters in nitride matrix. It has been shown, too, that the SHI irradiation leads to quenching a visual PL from nitride films. It can be suggested that SHI irradiation before annealing can result in the formation of Si phase in nitride matrix with less Si excess in comparison the ordinary thermal annealing